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| 001 | 14009 | ||
| 005 | 20180208230207.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.mee.2009.11.034 |
| 024 | 7 | _ | |2 WOS |a WOS:000276300700216 |
| 037 | _ | _ | |a PreJuSER-14009 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Nanoscience & Nanotechnology |
| 084 | _ | _ | |2 WoS |a Optics |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Rosezin, R. |b 0 |u FZJ |0 P:(DE-Juel1)VDB75720 |
| 245 | _ | _ | |a Observation of unipolar resistance switching in silver doped methyl-silsesquioxane |
| 260 | _ | _ | |a [S.l.] @ |b Elsevier |c 2010 |
| 300 | _ | _ | |a |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Microelectronic Engineering |x 0167-9317 |0 4347 |y 5 |v 87 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Resistive switching materials attract high scientific interest as a candidate for potential next-generation non-volatile memories. Nano crossbar structures and single junctions down to 60 x 60 nm(2) with integrated silver doped methyl-silsesquioxane (MSQ) as switching material are fabricated using UV nano imprint. Here silver doped MSQ with platinum top and bottom electrodes replaces the formerly used material stack with undoped MSQ between platinum bottom and silver top electrodes. The new material system yields advantages regarding the process temperature budget and therefore multiple crossbar arrays and electrode layers are possible in order to multiply the integration density by the number of crossbar layers. (C) 2009 Elsevier B.V. All rights reserved. |
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| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a Resistive switching |
| 653 | 2 | 0 | |2 Author |a Methyl-silsesquioxane |
| 653 | 2 | 0 | |2 Author |a MSQ |
| 653 | 2 | 0 | |2 Author |a Nano imprint lithography |
| 653 | 2 | 0 | |2 Author |a NIL |
| 653 | 2 | 0 | |2 Author |a Memory devices |
| 700 | 1 | _ | |a Meier, M. |b 1 |u FZJ |0 P:(DE-Juel1)VDB55622 |
| 700 | 1 | _ | |a Trellenkamp, S. |b 2 |u FZJ |0 P:(DE-Juel1)128856 |
| 700 | 1 | _ | |a Kügeler, C. |b 3 |u FZJ |0 P:(DE-Juel1)VDB15125 |
| 700 | 1 | _ | |a Waser, R. |b 4 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1016/j.mee.2009.11.034 |g Vol. 87 |q 87 |0 PERI:(DE-600)1497065-x |t Microelectronic engineering |v 87 |y 2010 |x 0167-9317 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.mee.2009.11.034 |
| 909 | C | O | |o oai:juser.fz-juelich.de:14009 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2010 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
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| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
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