Journal Article

PreJuSER-14009

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Observation of unipolar resistance switching in silver doped methyl-silsesquioxane

Rosezin, R.FZJ* ; Meier, M.FZJ* ; Trellenkamp, S.FZJ* ; Kügeler, C.FZJ* ; Waser, R.FZJ*

2010
Elsevier [S.l.] @

This record in other databases:  

Please use a persistent id in citations: doi:10.1016/j.mee.2009.11.034

Abstract: Resistive switching materials attract high scientific interest as a candidate for potential next-generation non-volatile memories. Nano crossbar structures and single junctions down to 60 x 60 nm(2) with integrated silver doped methyl-silsesquioxane (MSQ) as switching material are fabricated using UV nano imprint. Here silver doped MSQ with platinum top and bottom electrodes replaces the formerly used material stack with undoped MSQ between platinum bottom and silver top electrodes. The new material system yields advantages regarding the process temperature budget and therefore multiple crossbar arrays and electrode layers are possible in order to multiply the integration density by the number of crossbar layers. (C) 2009 Elsevier B.V. All rights reserved.

Keyword(s): J ; Resistive switching (auto) ; Methyl-silsesquioxane (auto) ; MSQ (auto) ; Nano imprint lithography (auto) ; NIL (auto) ; Memory devices (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
3. Prozesstechnologie (IBN-PT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010

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