000140777 001__ 140777
000140777 005__ 20210129212749.0
000140777 0247_ $$2doi$$a10.1134/S1063785013050039
000140777 0247_ $$2ISSN$$a1090-6533
000140777 0247_ $$2ISSN$$a1063-7850
000140777 0247_ $$2WOS$$aWOS:000320473700007
000140777 037__ $$aFZJ-2013-06024
000140777 082__ $$a530
000140777 1001_ $$0P:(DE-HGF)0$$aAlekseev, P. A.$$b0$$eCorresponding author
000140777 245__ $$aBehavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate
000140777 260__ $$aBerlin$$bSpringer Science + Business Media$$c2013
000140777 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1389363017_18230
000140777 3367_ $$2DataCite$$aOutput Types/Journal article
000140777 3367_ $$00$$2EndNote$$aJournal Article
000140777 3367_ $$2BibTeX$$aARTICLE
000140777 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000140777 3367_ $$2DRIVER$$aarticle
000140777 500__ $$3POF3_Assignment on 2016-02-29
000140777 520__ $$aA charge leakage in LaScO3 nanolayers on a Si substrate has been investigated by Kelvin probe microscopy. A charge leakage from the LaScO3 layer to the LaScO3/Si interface layer with a subsequent lateral charge spreading in the interface layer and simultaneous leakage to the Si substrate has been revealed in this system. A lateral charge spreading has not been directly observed in the LaScO3 layer.
000140777 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000140777 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000140777 7001_ $$0P:(DE-HGF)0$$aDunaevskii, M. S.$$b1
000140777 7001_ $$0P:(DE-HGF)0$$aGushchina, E. V.$$b2
000140777 7001_ $$0P:(DE-Juel1)156578$$aDürgün-Özben, Eylem$$b3$$ufzj
000140777 7001_ $$0P:(DE-HGF)0$$aLahderanta, E.$$b4
000140777 7001_ $$0P:(DE-HGF)0$$aTitkov, A. N.$$b5
000140777 773__ $$0PERI:(DE-600)2023931-2$$a10.1134/S1063785013050039$$gVol. 39, no. 5, p. 427 - 430$$n5$$p427 - 430$$tTechnical physics letters$$v39$$x1090-6533$$y2013
000140777 8564_ $$uhttps://juser.fz-juelich.de/record/140777/files/FZJ-2013-06024.pdf$$yRestricted$$zPublished final document.
000140777 909CO $$ooai:juser.fz-juelich.de:140777$$pVDB
000140777 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)156578$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000140777 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000140777 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000140777 9141_ $$y2013
000140777 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000140777 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000140777 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000140777 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000140777 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000140777 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000140777 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000140777 915__ $$0StatID:(DE-HGF)1040$$2StatID$$aDBCoverage$$bZoological Record
000140777 920__ $$lyes
000140777 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000140777 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000140777 980__ $$ajournal
000140777 980__ $$aVDB
000140777 980__ $$aUNRESTRICTED
000140777 980__ $$aI:(DE-Juel1)PGI-9-20110106
000140777 980__ $$aI:(DE-Juel1)VDB881
000140777 981__ $$aI:(DE-Juel1)VDB881