Journal Article

FZJ-2013-06024

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate

Alekseev, P. A. (Corresponding author) ; Dunaevskii, M. S. ; Gushchina, E. V. ; Dürgün-Özben, E.FZJ* ; Lahderanta, E. ; Titkov, A. N.

2013
Springer Science + Business Media Berlin

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Please use a persistent id in citations: doi:10.1134/S1063785013050039

Abstract: A charge leakage in LaScO3 nanolayers on a Si substrate has been investigated by Kelvin probe microscopy. A charge leakage from the LaScO3 layer to the LaScO3/Si interface layer with a subsequent lateral charge spreading in the interface layer and simultaneous leakage to the Si substrate has been revealed in this system. A lateral charge spreading has not been directly observed in the LaScO3 layer.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection ; Zoological Record

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