TY  - JOUR
AU  - Alekseev, P. A.
AU  - Dunaevskii, M. S.
AU  - Gushchina, E. V.
AU  - Dürgün-Özben, Eylem
AU  - Lahderanta, E.
AU  - Titkov, A. N.
TI  - Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate
JO  - Technical physics letters
VL  - 39
IS  - 5
SN  - 1090-6533
CY  - Berlin
PB  - Springer Science + Business Media
M1  - FZJ-2013-06024
SP  - 427 - 430
PY  - 2013
AB  - A charge leakage in LaScO3 nanolayers on a Si substrate has been investigated by Kelvin probe microscopy. A charge leakage from the LaScO3 layer to the LaScO3/Si interface layer with a subsequent lateral charge spreading in the interface layer and simultaneous leakage to the Si substrate has been revealed in this system. A lateral charge spreading has not been directly observed in the LaScO3 layer.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000320473700007
DO  - DOI:10.1134/S1063785013050039
UR  - https://juser.fz-juelich.de/record/140777
ER  -