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001     140777
005     20210129212749.0
024 7 _ |a 10.1134/S1063785013050039
|2 doi
024 7 _ |a 1090-6533
|2 ISSN
024 7 _ |a 1063-7850
|2 ISSN
024 7 _ |a WOS:000320473700007
|2 WOS
037 _ _ |a FZJ-2013-06024
082 _ _ |a 530
100 1 _ |a Alekseev, P. A.
|0 P:(DE-HGF)0
|b 0
|e Corresponding author
245 _ _ |a Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate
260 _ _ |a Berlin
|c 2013
|b Springer Science + Business Media
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1389363017_18230
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
500 _ _ |3 POF3_Assignment on 2016-02-29
520 _ _ |a A charge leakage in LaScO3 nanolayers on a Si substrate has been investigated by Kelvin probe microscopy. A charge leakage from the LaScO3 layer to the LaScO3/Si interface layer with a subsequent lateral charge spreading in the interface layer and simultaneous leakage to the Si substrate has been revealed in this system. A lateral charge spreading has not been directly observed in the LaScO3 layer.
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
|0 G:(DE-HGF)POF2-421
|c POF2-421
|x 0
|f POF II
588 _ _ |a Dataset connected to CrossRef, juser.fz-juelich.de
700 1 _ |a Dunaevskii, M. S.
|0 P:(DE-HGF)0
|b 1
700 1 _ |a Gushchina, E. V.
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Dürgün-Özben, Eylem
|0 P:(DE-Juel1)156578
|b 3
|u fzj
700 1 _ |a Lahderanta, E.
|0 P:(DE-HGF)0
|b 4
700 1 _ |a Titkov, A. N.
|0 P:(DE-HGF)0
|b 5
773 _ _ |a 10.1134/S1063785013050039
|g Vol. 39, no. 5, p. 427 - 430
|p 427 - 430
|n 5
|0 PERI:(DE-600)2023931-2
|t Technical physics letters
|v 39
|y 2013
|x 1090-6533
856 4 _ |u https://juser.fz-juelich.de/record/140777/files/FZJ-2013-06024.pdf
|z Published final document.
|y Restricted
909 C O |o oai:juser.fz-juelich.de:140777
|p VDB
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)156578
913 2 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-529H
|2 G:(DE-HGF)POF3-500
|v Addenda
|x 0
913 1 _ |a DE-HGF
|b Schlüsseltechnologien
|1 G:(DE-HGF)POF2-420
|0 G:(DE-HGF)POF2-421
|2 G:(DE-HGF)POF2-400
|v Frontiers of charge based Electronics
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF2
|l Grundlagen zukünftiger Informationstechnologien
914 1 _ |y 2013
915 _ _ |a JCR/ISI refereed
|0 StatID:(DE-HGF)0010
|2 StatID
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Thomson Reuters Master Journal List
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1040
|2 StatID
|b Zoological Record
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|x 1
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a I:(DE-Juel1)VDB881
981 _ _ |a I:(DE-Juel1)VDB881

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