%0 Journal Article
%A Wördenweber, R.
%A Schwarzkopf, J.
%A Hollmann, E.
%A Duk, A.
%A Cai, B.
%A Schmidbauer, M.
%T Impact of compressive in-plane strain on the ferroelectric properties of epitaxial NaNbO3 films on (110) NdGaO3
%J Applied physics letters
%V 103
%N 13
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M FZJ-2013-06093
%P 132908 -
%D 2013
%X Epitaxial a-axis oriented NaNbO3 films are grown on (110) oriented NdGaO3 substrates. The lattice mismatch between substrate and film leads to compressive strain of 0.7% in the a-c plane. As a consequence the in-plane permittivity and tunability are strongly enhanced compared to bulk NaNbO3 and a pronounced maximum in the temperature dependence of the permittivity occurs. Below the maximum at Tmax250K ferroelectric behavior is observed that seems to vanish above Tmax. The pristine phase of the film at T<Tmax is antiferroelectric and is easily suppressed by small applied electric fields. The ferroelectric phase shows a relaxor type behavior.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000325284500065
%R 10.1063/1.4822328
%U https://juser.fz-juelich.de/record/140855