Journal Article

FZJ-2013-06093

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of compressive in-plane strain on the ferroelectric properties of epitaxial NaNbO3 films on (110) NdGaO3

Wördenweber, R. (Corresponding author)FZJ* ; Schwarzkopf, J. ; Hollmann, E.FZJ* ; Duk, A. ; Cai, B.FZJ* ; Schmidbauer, M.

2013
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17332  doi:10.1063/1.4822328

Abstract: Epitaxial a-axis oriented NaNbO3 films are grown on (110) oriented NdGaO3 substrates. The lattice mismatch between substrate and film leads to compressive strain of 0.7% in the a-c plane. As a consequence the in-plane permittivity and tunability are strongly enhanced compared to bulk NaNbO3 and a pronounced maximum in the temperature dependence of the permittivity occurs. Below the maximum at Tmax250K ferroelectric behavior is observed that seems to vanish above Tmax. The pristine phase of the film at T<Tmax is antiferroelectric and is easily suppressed by small applied electric fields. The ferroelectric phase shows a relaxor type behavior.

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Contributing Institute(s):

1. Bioelektronik (PGI-8)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
3. Bioelektronik (ICS-8)

Research Program(s):

1. 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)
2. 453 - Physics of the Cell (POF2-453) (POF2-453)

Appears in the scientific report 2013

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Database coverage:
; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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