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000140855 1001_ $$0P:(DE-Juel1)128749$$aWördenweber, R.$$b0$$eCorresponding author$$ufzj
000140855 245__ $$aImpact of compressive in-plane strain on the ferroelectric properties of epitaxial NaNbO3 films on (110) NdGaO3
000140855 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
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000140855 520__ $$aEpitaxial a-axis oriented NaNbO3 films are grown on (110) oriented NdGaO3 substrates. The lattice mismatch between substrate and film leads to compressive strain of 0.7% in the a-c plane. As a consequence the in-plane permittivity and tunability are strongly enhanced compared to bulk NaNbO3 and a pronounced maximum in the temperature dependence of the permittivity occurs. Below the maximum at Tmax250K ferroelectric behavior is observed that seems to vanish above Tmax. The pristine phase of the film at T<Tmax is antiferroelectric and is easily suppressed by small applied electric fields. The ferroelectric phase shows a relaxor type behavior.
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000140855 7001_ $$0P:(DE-HGF)0$$aSchwarzkopf, J.$$b1
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000140855 7001_ $$0P:(DE-Juel1)156302$$aCai, B.$$b4$$ufzj
000140855 7001_ $$0P:(DE-HGF)0$$aSchmidbauer, M.$$b5
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