TY  - JOUR
AU  - Wördenweber, R.
AU  - Schwarzkopf, J.
AU  - Hollmann, E.
AU  - Duk, A.
AU  - Cai, B.
AU  - Schmidbauer, M.
TI  - Impact of compressive in-plane strain on the ferroelectric properties of epitaxial NaNbO3 films on (110) NdGaO3
JO  - Applied physics letters
VL  - 103
IS  - 13
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-06093
SP  - 132908 -
PY  - 2013
AB  - Epitaxial a-axis oriented NaNbO3 films are grown on (110) oriented NdGaO3 substrates. The lattice mismatch between substrate and film leads to compressive strain of 0.7% in the a-c plane. As a consequence the in-plane permittivity and tunability are strongly enhanced compared to bulk NaNbO3 and a pronounced maximum in the temperature dependence of the permittivity occurs. Below the maximum at Tmax250K ferroelectric behavior is observed that seems to vanish above Tmax. The pristine phase of the film at T<Tmax is antiferroelectric and is easily suppressed by small applied electric fields. The ferroelectric phase shows a relaxor type behavior.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000325284500065
DO  - DOI:10.1063/1.4822328
UR  - https://juser.fz-juelich.de/record/140855
ER  -