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@ARTICLE{Wrdenweber:140855,
author = {Wördenweber, R. and Schwarzkopf, J. and Hollmann, E. and
Duk, A. and Cai, B. and Schmidbauer, M.},
title = {{I}mpact of compressive in-plane strain on the
ferroelectric properties of epitaxial {N}a{N}b{O}3 films on
(110) {N}d{G}a{O}3},
journal = {Applied physics letters},
volume = {103},
number = {13},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {FZJ-2013-06093},
pages = {132908 -},
year = {2013},
abstract = {Epitaxial a-axis oriented NaNbO3 films are grown on (110)
oriented NdGaO3 substrates. The lattice mismatch between
substrate and film leads to compressive strain of $0.7\%$
in the a-c plane. As a consequence the in-plane permittivity
and tunability are strongly enhanced compared to bulk NaNbO3
and a pronounced maximum in the temperature dependence of
the permittivity occurs. Below the maximum at Tmax250K
ferroelectric behavior is observed that seems to vanish
above Tmax. The pristine phase of the film at T<Tmax is
antiferroelectric and is easily suppressed by small applied
electric fields. The ferroelectric phase shows a relaxor
type behavior.},
cin = {PGI-8 / JARA-FIT / ICS-8},
ddc = {530},
cid = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)ICS-8-20110106},
pnm = {423 - Sensorics and bioinspired systems (POF2-423) / 453 -
Physics of the Cell (POF2-453)},
pid = {G:(DE-HGF)POF2-423 / G:(DE-HGF)POF2-453},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000325284500065},
doi = {10.1063/1.4822328},
url = {https://juser.fz-juelich.de/record/140855},
}