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000014123 084__ $$2WoS$$aEngineering, Electrical & Electronic
000014123 084__ $$2WoS$$aNanoscience & Nanotechnology
000014123 084__ $$2WoS$$aPhysics, Applied
000014123 1001_ $$0P:(DE-Juel1)156578$$aDurgun Özben, E.$$b0$$uFZJ
000014123 245__ $$aRare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
000014123 260__ $$aNew York, NY$$bInst.$$c2011
000014123 300__ $$a01A903
000014123 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000014123 440_0 $$03988$$aJournal of Vacuum Science and Technology B$$vB29$$x0734-211X$$y1
000014123 500__ $$3POF3_Assignment on 2016-02-29
000014123 500__ $$aThis work was partially supported by the project KZWEI, funded in line with the technology funding for regional development (ERDF) of the European Union and by funds of the Free State of Saxony and the European Network of Excellence Nanosil (FP7 Grant No. 216171).
000014123 520__ $$aWe demonstrate the integration of TbScO3, LaScO3, and LaLuO3 as alternative gate oxides for fully depleted silicon on insulator (SOI) and strained SOI metal-oxide-semiconductor field-effect transistors (MOSFETs) with equivalent oxide thicknesses of 2.8, 2.4, and 1.55 nm, respectively. Silicate formation at the high-kappa/Si interface was studied by x-ray photoelectron spectroscopy. Electrical investigations revealed good transistor performance with these novel gate oxides with permittivities in the range of 26-32 and TiN as a metal gate. Steep inverse subthreshold slopes of 72 mV/dec, high I-on/I-off ratios over 10(8), and a low density of interface states of approximate to 5 X 1011 (eV cm(2))(-1) were achieved. MOSFETs on SOI substrates show good low field electron mobilities of 180, 183, and 188 cm(2)/V s for all investigated oxides. For devices on strained SOI the electron mobility was improved by a factor of 2. The measured mobilities are close to those of devices with HfO2 as gate dielectric, while offering better electrostatic control due to their higher permittivities. (c) 2011 American Vacuum Society. [DOI: 10.1116/1.3533760]
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000014123 7001_ $$0P:(DE-Juel1)VDB96623$$aLopes, J.M.J.$$b1$$uFZJ
000014123 7001_ $$0P:(DE-Juel1)VDB88502$$aNichau, A.$$b2$$uFZJ
000014123 7001_ $$0P:(DE-Juel1)VDB96622$$aLupták, R.$$b3$$uFZJ
000014123 7001_ $$0P:(DE-Juel1)128602$$aLenk, S.$$b4$$uFZJ
000014123 7001_ $$0P:(DE-Juel1)VDB17427$$aBesmehn, A.$$b5$$uFZJ
000014123 7001_ $$0P:(DE-HGF)0$$aBourdelle, K.K.$$b6
000014123 7001_ $$0P:(DE-Juel1)VDB97138$$aZhao, Q.T.$$b7$$uFZJ
000014123 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b8$$uFZJ
000014123 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b9$$uFZJ
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