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| Home > Publications database > Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors |
| Journal Article | PreJuSER-14123 |
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2011
Inst.
New York, NY
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Please use a persistent id in citations: doi:10.1116/1.3533760
Abstract: We demonstrate the integration of TbScO3, LaScO3, and LaLuO3 as alternative gate oxides for fully depleted silicon on insulator (SOI) and strained SOI metal-oxide-semiconductor field-effect transistors (MOSFETs) with equivalent oxide thicknesses of 2.8, 2.4, and 1.55 nm, respectively. Silicate formation at the high-kappa/Si interface was studied by x-ray photoelectron spectroscopy. Electrical investigations revealed good transistor performance with these novel gate oxides with permittivities in the range of 26-32 and TiN as a metal gate. Steep inverse subthreshold slopes of 72 mV/dec, high I-on/I-off ratios over 10(8), and a low density of interface states of approximate to 5 X 1011 (eV cm(2))(-1) were achieved. MOSFETs on SOI substrates show good low field electron mobilities of 180, 183, and 188 cm(2)/V s for all investigated oxides. For devices on strained SOI the electron mobility was improved by a factor of 2. The measured mobilities are close to those of devices with HfO2 as gate dielectric, while offering better electrostatic control due to their higher permittivities. (c) 2011 American Vacuum Society. [DOI: 10.1116/1.3533760]
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