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@ARTICLE{Durgunzben:14123,
      author       = {Durgun Özben, E. and Lopes, J.M.J. and Nichau, A. and
                      Lupták, R. and Lenk, S. and Besmehn, A. and Bourdelle, K.K.
                      and Zhao, Q.T. and Schubert, J. and Mantl, S.},
      title        = {{R}are-earth oxide/{T}i{N} gate stacks on high mobility
                      strained silicon on insulator for fully depleted
                      metal-oxide-semiconductor field-effect transistors},
      journal      = {Journal of vacuum science $\&$ technology / B},
      volume       = {29},
      issn         = {0734-211X},
      address      = {New York, NY},
      publisher    = {Inst.},
      reportid     = {PreJuSER-14123},
      pages        = {01A903},
      year         = {2011},
      note         = {This work was partially supported by the project KZWEI,
                      funded in line with the technology funding for regional
                      development (ERDF) of the European Union and by funds of the
                      Free State of Saxony and the European Network of Excellence
                      Nanosil (FP7 Grant No. 216171).},
      abstract     = {We demonstrate the integration of TbScO3, LaScO3, and
                      LaLuO3 as alternative gate oxides for fully depleted silicon
                      on insulator (SOI) and strained SOI
                      metal-oxide-semiconductor field-effect transistors (MOSFETs)
                      with equivalent oxide thicknesses of 2.8, 2.4, and 1.55 nm,
                      respectively. Silicate formation at the high-kappa/Si
                      interface was studied by x-ray photoelectron spectroscopy.
                      Electrical investigations revealed good transistor
                      performance with these novel gate oxides with permittivities
                      in the range of 26-32 and TiN as a metal gate. Steep inverse
                      subthreshold slopes of 72 mV/dec, high I-on/I-off ratios
                      over 10(8), and a low density of interface states of
                      approximate to 5 X 1011 (eV cm(2))(-1) were achieved.
                      MOSFETs on SOI substrates show good low field electron
                      mobilities of 180, 183, and 188 cm(2)/V s for all
                      investigated oxides. For devices on strained SOI the
                      electron mobility was improved by a factor of 2. The
                      measured mobilities are close to those of devices with HfO2
                      as gate dielectric, while offering better electrostatic
                      control due to their higher permittivities. (c) 2011
                      American Vacuum Society. [DOI: 10.1116/1.3533760]},
      keywords     = {J (WoSType)},
      cin          = {PGI-9 / JARA-FIT / ZCH},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ZCH-20090406},
      pnm          = {Grundlagen für zukünftige Informationstechnologien /
                      NANOSIL - Silicon-based nanostructures and nanodevices for
                      long term nanoelectronics applications (216171)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(EU-Grant)216171},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000286679400059},
      doi          = {10.1116/1.3533760},
      url          = {https://juser.fz-juelich.de/record/14123},
}