guest ::
| Home > Publications database > Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors > print |
| Home > Publications database > Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors > print |
| 001 | 14123 | ||
| 005 | 20180208225354.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1116/1.3533760 |
| 024 | 7 | _ | |2 WOS |a WOS:000286679400059 |
| 037 | _ | _ | |a PreJuSER-14123 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Nanoscience & Nanotechnology |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Durgun Özben, E. |b 0 |u FZJ |0 P:(DE-Juel1)156578 |
| 245 | _ | _ | |a Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors |
| 260 | _ | _ | |a New York, NY |b Inst. |c 2011 |
| 300 | _ | _ | |a 01A903 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Vacuum Science and Technology B |x 0734-211X |0 3988 |y 1 |v B29 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a This work was partially supported by the project KZWEI, funded in line with the technology funding for regional development (ERDF) of the European Union and by funds of the Free State of Saxony and the European Network of Excellence Nanosil (FP7 Grant No. 216171). |
| 520 | _ | _ | |a We demonstrate the integration of TbScO3, LaScO3, and LaLuO3 as alternative gate oxides for fully depleted silicon on insulator (SOI) and strained SOI metal-oxide-semiconductor field-effect transistors (MOSFETs) with equivalent oxide thicknesses of 2.8, 2.4, and 1.55 nm, respectively. Silicate formation at the high-kappa/Si interface was studied by x-ray photoelectron spectroscopy. Electrical investigations revealed good transistor performance with these novel gate oxides with permittivities in the range of 26-32 and TiN as a metal gate. Steep inverse subthreshold slopes of 72 mV/dec, high I-on/I-off ratios over 10(8), and a low density of interface states of approximate to 5 X 1011 (eV cm(2))(-1) were achieved. MOSFETs on SOI substrates show good low field electron mobilities of 180, 183, and 188 cm(2)/V s for all investigated oxides. For devices on strained SOI the electron mobility was improved by a factor of 2. The measured mobilities are close to those of devices with HfO2 as gate dielectric, while offering better electrostatic control due to their higher permittivities. (c) 2011 American Vacuum Society. [DOI: 10.1116/1.3533760] |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |0 G:(DE-Juel1)FUEK412 |c P42 |2 G:(DE-HGF) |x 0 |
| 536 | _ | _ | |a NANOSIL - Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (216171) |0 G:(EU-Grant)216171 |c 216171 |x 1 |f FP7-ICT-2007-1 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Lopes, J.M.J. |b 1 |u FZJ |0 P:(DE-Juel1)VDB96623 |
| 700 | 1 | _ | |a Nichau, A. |b 2 |u FZJ |0 P:(DE-Juel1)VDB88502 |
| 700 | 1 | _ | |a Lupták, R. |b 3 |u FZJ |0 P:(DE-Juel1)VDB96622 |
| 700 | 1 | _ | |a Lenk, S. |b 4 |u FZJ |0 P:(DE-Juel1)128602 |
| 700 | 1 | _ | |a Besmehn, A. |b 5 |u FZJ |0 P:(DE-Juel1)VDB17427 |
| 700 | 1 | _ | |a Bourdelle, K.K. |b 6 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Zhao, Q.T. |b 7 |u FZJ |0 P:(DE-Juel1)VDB97138 |
| 700 | 1 | _ | |a Schubert, J. |b 8 |u FZJ |0 P:(DE-Juel1)128631 |
| 700 | 1 | _ | |a Mantl, S. |b 9 |u FZJ |0 P:(DE-Juel1)VDB4959 |
| 773 | _ | _ | |a 10.1116/1.3533760 |g Vol. 29, p. 01A903 |p 01A903 |q 29<01A903 |0 PERI:(DE-600)1475429-0 |t Journal of vacuum science & technology / B |v 29 |y 2011 |x 0734-211X |
| 856 | 7 | _ | |u http://dx.doi.org/10.1116/1.3533760 |
| 909 | C | O | |o oai:juser.fz-juelich.de:14123 |p openaire |p VDB |p ec_fundedresources |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |k P42 |l Grundlagen für zukünftige Informationstechnologien (FIT) |0 G:(DE-Juel1)FUEK412 |v Grundlagen für zukünftige Informationstechnologien |x 0 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 914 | 1 | _ | |y 2011 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |g PGI |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
| 920 | 1 | _ | |0 I:(DE-Juel1)ZCH-20090406 |k ZCH |l Zentralabteilung für Chemische Analysen |g ZCH |x 2 |
| 970 | _ | _ | |a VDB:(DE-Juel1)126030 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a I:(DE-Juel1)ZEA-3-20090406 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)ZEA-3-20090406 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|