Journal Article

PreJuSER-14125

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique

Sedghi, N. ; Mitrovic, I. Z. ; Hall, S. ; Lopes, J. M. J.FZJ* ; Schubert, J.FZJ*

2011
Inst. New York, NY

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Please use a persistent id in citations: doi:10.1116/1.3533267

Abstract: A new three-pulse CV measurement technique has been developed to investigate the trapping and detrapping of negative and positive charges in SiO2/LaLuO3 gate dielectric stacks on p-type silicon. Two types of negative and positive trapped charges have been observed in these devices which are deemed to be related to electron and hole trapping, respectively. The technique has the advantage that trapping and detrapping of both types of charges can be measured independently. The concentrations of trapped charge types, their release times, and their relationship with measurement parameters such as pulse charging/discharging time and pulse amplitude have been investigated. A logarithmic universal relationship was found between the flat-band voltage shifts due to detrapping of positive charges with the discharging time. (c) 2011 American Vacuum Society. [DOI: 10.1116/1.3533267]

Keyword(s): J

Note: The work was funded by the European Union Framework Programme 7, Network of Excellence, NANOSIL.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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