% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Liu:141502,
      author       = {Liu, Linjie and Jin, Lei and Knoll, Lars and Wirths,
                      Stephan and Nichau, Alexander and Buca, Dan and Mussler,
                      Gregor and Holländer, Bernhard and Xu, Dawei and Feng Di,
                      Zeng and Zhang, Miao and Zhao, Qing-Tai and Mantl,
                      Siegfried},
      title        = {{U}ltrathin highly uniform {N}i({A}l) germanosilicide layer
                      with modulated {B}8 type {N}i5({S}i{G}e)3 phase formed on
                      strained {S}i1−x{G}ex layers},
      journal      = {Applied physics letters},
      volume       = {103},
      number       = {23},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2013-06671},
      pages        = {231909 -},
      year         = {2013},
      abstract     = {We present a method to form ultrathin highly uniform Ni(Al)
                      germanosilicide layers oncompressively strained Si1xGex
                      substrates and their structural characteristics. The uniform
                      Ni(Al)germanosilicide film is formed with Ni/Al alloy at an
                      optimized temperature of 400 C withan optimized Al atomic
                      content of 20 $at.\%.$ We find only two kinds of grains in
                      the layer. Bothgrains show orthogonal relationship with
                      modified B8 type phase. The growth plane is identifiedto be
                      {10-10}-type plane. After germanosilicidation the strain in
                      the rest Si1xGex layer is conserved,which provides a great
                      advantage for device application.},
      cin          = {PGI-9 / PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000328634900030},
      doi          = {10.1063/1.4838695},
      url          = {https://juser.fz-juelich.de/record/141502},
}