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@INPROCEEDINGS{Hagedorn:141626,
      author       = {Hagedorn, M. and Wirths, S. and Schäfer, A. and Hartmann,
                      J. M. and Fox, A. and Buca, D. and Mantl, S.},
      title        = {{I}nvestigations of channel direction influence on the
                      effective hole mobility of {SOI}(110) and highly
                      compressively strained {S}i0.5{G}e0.5/{SOI}(100)
                      p-{MOSFET}s},
      reportid     = {FZJ-2013-06791},
      year         = {2013},
      abstract     = {To enhance the MOS transistor performance high mobility
                      channel materials are required, in addition to high-k metal
                      gate stacks and continued scaling. For this purpose we
                      investigated the electronic transport of (110)SOI and highly
                      compressive Si0.5Ge0.5 on (100)SOI in ultrathin body, long
                      channel p-MOSFETs. The effective hole mobility for different
                      channel orientations is measured and compared to similar
                      devices fabricated on (100)SOI taken as reference. For all
                      samples gates stacks are formed using HfO2 and/or La based
                      rare earth oxides as gate oxide with TiN metal gates. The
                      electrical characterization at room temperature was extended
                      to low temperatures down to 77K. All devices show excellent
                      transfer and output characteristics with Ion/Ioff ratios of
                      up to ~1E10 (for 77K) and a perfectly linear temperature
                      dependence of the subthreshold swing. At 77K the effective
                      peak hole mobility of strained Si0.5Ge0.5/SOI pMOSFTEs
                      reaches 320 cm2/Vs, [100] and above 400 cm2/Vs for [110]
                      channel orientations. Different from Si(100) devices the
                      hole mobility in strained SiGe MOSFETs is about $20\%$
                      higher in the [100] as in the [110] crystal direction. At RT
                      the [010] and [011] channel directions show an increase of
                      the peak mobility of about 2.5 and 2, respectively, with
                      respect to the SOI reference devices. In addition we will
                      also address the effect of substrate orientation by
                      comparing (110) and (100) SOI devices.},
      month         = {May},
      date          = {2013-05-27},
      organization  = {European Material Research Society,
                       Strasbourg (France), 27 May 2013 - 31
                       May 2013},
      subtyp        = {Other},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/141626},
}