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001     141768
005     20220930130025.0
024 7 _ |a 10.1088/0957-4484/25/3/035703
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024 7 _ |a 1361-6528
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100 1 _ |a Sydoruk, V A
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245 _ _ |a Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation
260 _ _ |a Bristol
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|b IOP Publ.
336 7 _ |a Journal Article
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700 1 _ |a Meyer, C
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700 1 _ |a Petrychuk, M V
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700 1 _ |a Danilchenko, B A
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700 1 _ |a Weber, P
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700 1 _ |a Stampfer, C
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700 1 _ |a Li, J
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700 1 _ |a Vitusevich, S A
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773 _ _ |a 10.1088/0957-4484/25/3/035703
|g Vol. 25, no. 3, p. 035703 -
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|t Nanotechnology
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|x 1361-6528
856 4 _ |u https://juser.fz-juelich.de/record/141768/files/FZJ-2014-00125.pdf
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