Home > Publications database > Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation
 
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Journal Article FZJ-2014-00125
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Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation

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2014
IOP Publ. Bristol

Nanotechnology 25(3), 035703 - () [10.1088/0957-4484/25/3/035703]

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Classification:
Contributing Institute(s):
  1. Elektronische Eigenschaften (PGI-6)
Research Program(s):
  1. 422 - Spin-based and quantum information (POF2-422) (POF2-422)

Appears in the scientific report 2014
Database coverage:
Medline ; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; NCBI Molecular Biology Database ; NationallizenzNationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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 Record created 2014-01-07, last modified 2022-09-30
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