000014997 001__ 14997
000014997 005__ 20180208222857.0
000014997 0247_ $$2DOI$$a10.1016/j.cap.2010.10.022
000014997 0247_ $$2WOS$$aWOS:000294208600017
000014997 037__ $$aPreJuSER-14997
000014997 041__ $$aeng
000014997 082__ $$a530
000014997 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000014997 084__ $$2WoS$$aPhysics, Applied
000014997 1001_ $$0P:(DE-Juel1)130570$$aBruchhaus, R.$$b0$$uFZJ
000014997 245__ $$aBipolar resistive switching in oxides: mechanisms and scaling
000014997 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2011
000014997 300__ $$aE75 - E78
000014997 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000014997 3367_ $$2DataCite$$aOutput Types/Journal article
000014997 3367_ $$00$$2EndNote$$aJournal Article
000014997 3367_ $$2BibTeX$$aARTICLE
000014997 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000014997 3367_ $$2DRIVER$$aarticle
000014997 440_0 $$023941$$aCurrent Applied Physics$$v11$$x1567-1739$$y2
000014997 500__ $$3POF3_Assignment on 2016-02-29
000014997 500__ $$aThis work was supported in part by Intel Corp., Santa Clara, USA. We thank R. Borowski, M. Grates, C. Kuegeler, M. Meier, C. Nauenheim, R. Rosezin, A. Ruediger, and K. Szot for their contributions to this study.
000014997 520__ $$aRecently bipolar resistive switching of transition metal oxides is investigated to be used in next-generation non-volatile memory technologies. Switchable resistance states are based on reduction and oxidation (redox) reactions within the oxides. In the first part of this study resistive switching in Fe-doped SrTiO3 thin films is discussed. Careful conductive tip AFM analysis revealed that after the electroforming and top electrode removal a very complex switching behavior emerges. Locally separated filamentary as well as area dependent switching with different switching polarity with respect to the bias polarity of the SET and RESET processes were observed in the same sample. In the second part of the paper nanocrossbar devices are proposed as a vehicle to ease the comparison of promising materials using identical device geometry. The potential scaling behavior of resistively switching memory elements is addressed by the preparation of nominally 100 x 100 nm(2) crosspoint structures using two different transition metal oxides, namely NiO and TiO2. (C) 2011 Elsevier B. V. All rights reserved.
000014997 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000014997 588__ $$aDataset connected to Web of Science
000014997 650_7 $$2WoSType$$aJ
000014997 65320 $$2Author$$aResistive switching
000014997 65320 $$2Author$$aMechanism
000014997 65320 $$2Author$$aScaling
000014997 7001_ $$0P:(DE-Juel1)VDB64025$$aMünstermann, R.$$b1$$uFZJ
000014997 7001_ $$0P:(DE-Juel1)VDB67806$$aMenke, T.$$b2$$uFZJ
000014997 7001_ $$0P:(DE-Juel1)VDB95140$$aHermes, C.$$b3$$uFZJ
000014997 7001_ $$0P:(DE-Juel1)VDB95139$$aLentz, F.$$b4$$uFZJ
000014997 7001_ $$0P:(DE-Juel1)VDB75716$$aWeng, R.$$b5$$uFZJ
000014997 7001_ $$0P:(DE-Juel1)VDB5464$$aDittmann, R.$$b6$$uFZJ
000014997 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b7$$uFZJ
000014997 773__ $$0PERI:(DE-600)2039065-8$$a10.1016/j.cap.2010.10.022$$gVol. 11, p. E75 - E78$$pE75 - E78$$q11<E75 - E78$$tCurrent applied physics$$v11$$x1567-1739$$y2011
000014997 8567_ $$uhttp://dx.doi.org/10.1016/j.cap.2010.10.022
000014997 909CO $$ooai:juser.fz-juelich.de:14997$$pVDB
000014997 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000014997 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000014997 9141_ $$y2011
000014997 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000014997 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$gPGI$$kPGI-7$$lElektronische Materialien$$x0
000014997 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000014997 970__ $$aVDB:(DE-Juel1)127521
000014997 980__ $$aVDB
000014997 980__ $$aConvertedRecord
000014997 980__ $$ajournal
000014997 980__ $$aI:(DE-Juel1)PGI-7-20110106
000014997 980__ $$aI:(DE-82)080009_20140620
000014997 980__ $$aUNRESTRICTED
000014997 981__ $$aI:(DE-Juel1)VDB881