TY  - JOUR
AU  - Bruchhaus, R.
AU  - Münstermann, R.
AU  - Menke, T.
AU  - Hermes, C.
AU  - Lentz, F.
AU  - Weng, R.
AU  - Dittmann, R.
AU  - Waser, R.
TI  - Bipolar resistive switching in oxides: mechanisms and scaling
JO  - Current applied physics
VL  - 11
SN  - 1567-1739
CY  - Amsterdam [u.a.]
PB  - Elsevier Science
M1  - PreJuSER-14997
SP  - E75 - E78
PY  - 2011
N1  - This work was supported in part by Intel Corp., Santa Clara, USA. We thank R. Borowski, M. Grates, C. Kuegeler, M. Meier, C. Nauenheim, R. Rosezin, A. Ruediger, and K. Szot for their contributions to this study.
AB  - Recently bipolar resistive switching of transition metal oxides is investigated to be used in next-generation non-volatile memory technologies. Switchable resistance states are based on reduction and oxidation (redox) reactions within the oxides. In the first part of this study resistive switching in Fe-doped SrTiO3 thin films is discussed. Careful conductive tip AFM analysis revealed that after the electroforming and top electrode removal a very complex switching behavior emerges. Locally separated filamentary as well as area dependent switching with different switching polarity with respect to the bias polarity of the SET and RESET processes were observed in the same sample. In the second part of the paper nanocrossbar devices are proposed as a vehicle to ease the comparison of promising materials using identical device geometry. The potential scaling behavior of resistively switching memory elements is addressed by the preparation of nominally 100 x 100 nm(2) crosspoint structures using two different transition metal oxides, namely NiO and TiO2. (C) 2011 Elsevier B. V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000294208600017
DO  - DOI:10.1016/j.cap.2010.10.022
UR  - https://juser.fz-juelich.de/record/14997
ER  -