% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Bruchhaus:14997,
      author       = {Bruchhaus, R. and Münstermann, R. and Menke, T. and
                      Hermes, C. and Lentz, F. and Weng, R. and Dittmann, R. and
                      Waser, R.},
      title        = {{B}ipolar resistive switching in oxides: mechanisms and
                      scaling},
      journal      = {Current applied physics},
      volume       = {11},
      issn         = {1567-1739},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PreJuSER-14997},
      pages        = {E75 - E78},
      year         = {2011},
      note         = {This work was supported in part by Intel Corp., Santa
                      Clara, USA. We thank R. Borowski, M. Grates, C. Kuegeler, M.
                      Meier, C. Nauenheim, R. Rosezin, A. Ruediger, and K. Szot
                      for their contributions to this study.},
      abstract     = {Recently bipolar resistive switching of transition metal
                      oxides is investigated to be used in next-generation
                      non-volatile memory technologies. Switchable resistance
                      states are based on reduction and oxidation (redox)
                      reactions within the oxides. In the first part of this study
                      resistive switching in Fe-doped SrTiO3 thin films is
                      discussed. Careful conductive tip AFM analysis revealed that
                      after the electroforming and top electrode removal a very
                      complex switching behavior emerges. Locally separated
                      filamentary as well as area dependent switching with
                      different switching polarity with respect to the bias
                      polarity of the SET and RESET processes were observed in the
                      same sample. In the second part of the paper nanocrossbar
                      devices are proposed as a vehicle to ease the comparison of
                      promising materials using identical device geometry. The
                      potential scaling behavior of resistively switching memory
                      elements is addressed by the preparation of nominally 100 x
                      100 nm(2) crosspoint structures using two different
                      transition metal oxides, namely NiO and TiO2. (C) 2011
                      Elsevier B. V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000294208600017},
      doi          = {10.1016/j.cap.2010.10.022},
      url          = {https://juser.fz-juelich.de/record/14997},
}