%0 Conference Paper
%A Zhang, C.
%A Meier, Matthias
%A Lambertz, A.
%A Smirnov, V.
%A Gordijn, A.
%A Merdzhanova, T.
%T Development of P-Type µc-SiOx:H for Thin-Film Silicon Solar Cells on Sputtered ZnO:Al
%I WIP
%M FZJ-2014-00578
%P 2554 - 2557
%D 2013
%X Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) was developed and implemented as a contact layer in hydrogenated amorphous thin film silicon (a-Si:H) single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al and tunable refractive index make p-type μc-SiOx:H a promising alternative to the commonly used p-type μc-Si:H contact layers. In this work p-type μc-SiOx:H layers were fabricated with a conductivity up to the order of 10-2 S/cm and over 60% Raman crystallinity. Furthermore, we present p-type μc-SiOx:H with a broad range over which the optical properties (band gap E04 and refractive index n) can be tuned (2.1 eV < E04 < 2.8 eV and 1.6 < n < 2.6) by adapting deposition parameters like CO2/SiH4 ratio in the gas mixture. a-Si:H solar cells were produced with an conversion efficiency improvement from 9.4 to 9.7% by using p-type μc-SiOx:H compared to standard p-type μc-Si:H contact layer.
%B 28th European Photovoltaic Solar Energy Conference and Exhibition
%C 30 Sep 2013 - 4 Oct 2013, Paris (France)
Y2 30 Sep 2013 - 4 Oct 2013
M2 Paris, France
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%R 10.4229/28thEUPVSEC2013-3CV.1.41
%U https://juser.fz-juelich.de/record/150524