Contribution to a conference proceedings

FZJ-2014-00578

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Development of P-Type µc-SiOx:H for Thin-Film Silicon Solar Cells on Sputtered ZnO:Al

Zhang, C. (Corresponding author)FZJ* ; Meier, M.FZJ* ; Lambertz, A.FZJ* ; Smirnov, V.FZJ* ; Gordijn, A.FZJ* ; Merdzhanova, T.FZJ*

2013
WIP

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Please use a persistent id in citations: doi:10.4229/28thEUPVSEC2013-3CV.1.41

Abstract: Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) was developed and implemented as a contact layer in hydrogenated amorphous thin film silicon (a-Si:H) single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al and tunable refractive index make p-type μc-SiOx:H a promising alternative to the commonly used p-type μc-Si:H contact layers. In this work p-type μc-SiOx:H layers were fabricated with a conductivity up to the order of 10-2 S/cm and over 60% Raman crystallinity. Furthermore, we present p-type μc-SiOx:H with a broad range over which the optical properties (band gap E04 and refractive index n) can be tuned (2.1 eV < E04 < 2.8 eV and 1.6 < n < 2.6) by adapting deposition parameters like CO2/SiH4 ratio in the gas mixture. a-Si:H solar cells were produced with an conversion efficiency improvement from 9.4 to 9.7% by using p-type μc-SiOx:H compared to standard p-type μc-Si:H contact layer.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 111 - Thin Film Photovoltaics (POF2-111) (POF2-111)
2. FAST TRACK - Accelerated development and prototyping of nano-technology-based high-efficiency thin-film silicon solar modules (283501) (283501)
3. HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406) (HITEC-20170406)

Appears in the scientific report 2013

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