TY  - CONF
AU  - Zhang, C.
AU  - Meier, Matthias
AU  - Lambertz, A.
AU  - Smirnov, V.
AU  - Gordijn, A.
AU  - Merdzhanova, T.
TI  - Development of P-Type µc-SiOx:H for Thin-Film Silicon Solar Cells on Sputtered ZnO:Al
PB  - WIP
M1  - FZJ-2014-00578
SP  - 2554 - 2557
PY  - 2013
AB  - Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) was developed and implemented as a contact layer in hydrogenated amorphous thin film silicon (a-Si:H) single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al and tunable refractive index make p-type μc-SiOx:H a promising alternative to the commonly used p-type μc-Si:H contact layers. In this work p-type μc-SiOx:H layers were fabricated with a conductivity up to the order of 10-2 S/cm and over 60% Raman crystallinity. Furthermore, we present p-type μc-SiOx:H with a broad range over which the optical properties (band gap E04 and refractive index n) can be tuned (2.1 eV < E04 < 2.8 eV and 1.6 < n < 2.6) by adapting deposition parameters like CO2/SiH4 ratio in the gas mixture. a-Si:H solar cells were produced with an conversion efficiency improvement from 9.4 to 9.7% by using p-type μc-SiOx:H compared to standard p-type μc-Si:H contact layer.
T2  - 28th European Photovoltaic Solar Energy Conference and Exhibition
CY  - 30 Sep 2013 - 4 Oct 2013, Paris (France)
Y2  - 30 Sep 2013 - 4 Oct 2013
M2  - Paris, France
LB  - PUB:(DE-HGF)8
DO  - DOI:10.4229/28thEUPVSEC2013-3CV.1.41
UR  - https://juser.fz-juelich.de/record/150524
ER  -