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@INPROCEEDINGS{Zhang:150524,
      author       = {Zhang, C. and Meier, Matthias and Lambertz, A. and Smirnov,
                      V. and Gordijn, A. and Merdzhanova, T.},
      title        = {{D}evelopment of {P}-{T}ype µc-{S}i{O}x:{H} for
                      {T}hin-{F}ilm {S}ilicon {S}olar {C}ells on {S}puttered
                      {Z}n{O}:{A}l},
      publisher    = {WIP},
      reportid     = {FZJ-2014-00578},
      pages        = {2554 - 2557},
      year         = {2013},
      abstract     = {Hydrogenated microcrystalline silicon oxide (μc-SiOx:H)
                      was developed and implemented as a contact layer in
                      hydrogenated amorphous thin film silicon (a-Si:H) single
                      junction solar cells. Higher transparency, sufficient
                      electrical conductivity, low ohmic contact to sputtered
                      ZnO:Al and tunable refractive index make p-type μc-SiOx:H a
                      promising alternative to the commonly used p-type μc-Si:H
                      contact layers. In this work p-type μc-SiOx:H layers were
                      fabricated with a conductivity up to the order of 10-2 S/cm
                      and over $60\%$ Raman crystallinity. Furthermore, we present
                      p-type μc-SiOx:H with a broad range over which the optical
                      properties (band gap E04 and refractive index n) can be
                      tuned (2.1 eV < E04 < 2.8 eV and 1.6 < n < 2.6) by adapting
                      deposition parameters like CO2/SiH4 ratio in the gas
                      mixture. a-Si:H solar cells were produced with an conversion
                      efficiency improvement from 9.4 to $9.7\%$ by using p-type
                      μc-SiOx:H compared to standard p-type μc-Si:H contact
                      layer.},
      month         = {Sep},
      date          = {2013-09-30},
      organization  = {28th European Photovoltaic Solar
                       Energy Conference and Exhibition, Paris
                       (France), 30 Sep 2013 - 4 Oct 2013},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111) / FAST TRACK -
                      Accelerated development and prototyping of
                      nano-technology-based high-efficiency thin-film silicon
                      solar modules (283501) / HITEC - Helmholtz Interdisciplinary
                      Doctoral Training in Energy and Climate Research (HITEC)
                      (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF2-111 / G:(EU-Grant)283501 /
                      G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.4229/28thEUPVSEC2013-3CV.1.41},
      url          = {https://juser.fz-juelich.de/record/150524},
}