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| Home > Publications database > Development of P-Type µc-SiOx:H for Thin-Film Silicon Solar Cells on Sputtered ZnO:Al > print |
| 001 | 150524 | ||
| 005 | 20240712084514.0 | ||
| 024 | 7 | _ | |2 doi |a 10.4229/28thEUPVSEC2013-3CV.1.41 |
| 037 | _ | _ | |a FZJ-2014-00578 |
| 041 | _ | _ | |a eng |
| 100 | 1 | _ | |0 P:(DE-Juel1)136680 |a Zhang, C. |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 28th European Photovoltaic Solar Energy Conference and Exhibition |c Paris |d 2013-09-30 - 2013-10-04 |w France |
| 245 | _ | _ | |a Development of P-Type µc-SiOx:H for Thin-Film Silicon Solar Cells on Sputtered ZnO:Al |
| 260 | _ | _ | |b WIP |c 2013 |
| 300 | _ | _ | |a 2554 - 2557 |
| 336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1420633376_23892 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) was developed and implemented as a contact layer in hydrogenated amorphous thin film silicon (a-Si:H) single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al and tunable refractive index make p-type μc-SiOx:H a promising alternative to the commonly used p-type μc-Si:H contact layers. In this work p-type μc-SiOx:H layers were fabricated with a conductivity up to the order of 10-2 S/cm and over 60% Raman crystallinity. Furthermore, we present p-type μc-SiOx:H with a broad range over which the optical properties (band gap E04 and refractive index n) can be tuned (2.1 eV < E04 < 2.8 eV and 1.6 < n < 2.6) by adapting deposition parameters like CO2/SiH4 ratio in the gas mixture. a-Si:H solar cells were produced with an conversion efficiency improvement from 9.4 to 9.7% by using p-type μc-SiOx:H compared to standard p-type μc-Si:H contact layer. |
| 536 | _ | _ | |0 G:(DE-HGF)POF2-111 |a 111 - Thin Film Photovoltaics (POF2-111) |c POF2-111 |f POF II |x 0 |
| 536 | _ | _ | |0 G:(EU-Grant)283501 |a FAST TRACK - Accelerated development and prototyping of nano-technology-based high-efficiency thin-film silicon solar modules (283501) |c 283501 |f FP7-NMP-ENERGY-2011 |x 1 |
| 536 | _ | _ | |0 G:(DE-Juel1)HITEC-20170406 |x 2 |c HITEC-20170406 |a HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406) |
| 588 | _ | _ | |a Dataset connected to DataCite |
| 700 | 1 | _ | |0 P:(DE-Juel1)130830 |a Meier, Matthias |b 1 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)130263 |a Lambertz, A. |b 2 |
| 700 | 1 | _ | |0 P:(DE-Juel1)130297 |a Smirnov, V. |b 3 |
| 700 | 1 | _ | |0 P:(DE-Juel1)130242 |a Gordijn, A. |b 4 |
| 700 | 1 | _ | |0 P:(DE-Juel1)130268 |a Merdzhanova, T. |b 5 |
| 773 | _ | _ | |a 10.4229/28thEUPVSEC2013-3CV.1.41 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/150524/files/FZJ-2014-00578.pdf |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:150524 |p openaire |p VDB |p ec_fundedresources |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)136680 |a Forschungszentrum Jülich GmbH |b 0 |k FZJ |
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| 913 | 2 | _ | |a DE-HGF |b Forschungsbereich Energie |l Erneuerbare Energien |1 G:(DE-HGF)POF3-120 |0 G:(DE-HGF)POF3-129H |2 G:(DE-HGF)POF3-100 |v Addenda |x 0 |
| 913 | 1 | _ | |0 G:(DE-HGF)POF2-111 |1 G:(DE-HGF)POF2-110 |2 G:(DE-HGF)POF2-100 |a DE-HGF |b Energie |l Erneuerbare Energien |v Thin Film Photovoltaics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |
| 914 | 1 | _ | |y 2013 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)IEK-5-20101013 |k IEK-5 |l Photovoltaik |x 0 |
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| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)IMD-3-20101013 |
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