%0 Conference Paper
%A Hardtdegen, Hilde
%A Winden, Andreas
%A Fox, Alfred
%A Haab, Anna
%A Grützmacher, Detlev
%A Kordos, Peter
%A Gregusova, Dagmar
%A Maros, Michel
%A Mikulics, Martin
%T Micro-PL for MOVPE grown AlGaN/GaN HFET structure optimization
%M FZJ-2014-00599
%@ 978-3-89336-870-9
%P 59 - 62
%D 2013
%X Micro-photoluminescence (μ-PL) studies were performed on AlGaN/GaN heterostructure field effect transistor
%X (HFET) structures with different gate recessing depths. It was found that μ-PL is the method of choice for
%X detecting strain in the lateral resolution relevant for HFET device length scales and therefore useful for
%X structure optimization. Strain is partially relaxed and non-uniform after recessing. The PL-results elucidate the
%X device characteristics and partially explain the reduced charge density observed.
%B 15th European Workshop on Metalorganic Vapour Phase Epitaxie
%C 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2 2 Jun 2013 - 5 Jun 2013
M2 Aachen, Germany
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%U https://juser.fz-juelich.de/record/150545