Contribution to a conference proceedings

FZJ-2014-00599

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Micro-PL for MOVPE grown AlGaN/GaN HFET structure optimization

Hardtdegen, H. (Corresponding author)FZJ* ; Winden, A.FZJ* ; Fox, A.FZJ* ; Haab, A.FZJ* ; Grützmacher, D.FZJ* ; Kordos, P. ; Gregusova, D. ; Maros, M. ; Mikulics, M.FZJ*

2013

ISBN: 978-3-89336-870-9

Abstract: Micro-photoluminescence (μ-PL) studies were performed on AlGaN/GaN heterostructure field effect transistor (HFET) structures with different gate recessing depths. It was found that μ-PL is the method of choice for detecting strain in the lateral resolution relevant for HFET device length scales and therefore useful for structure optimization. Strain is partially relaxed and non-uniform after recessing. The PL-results elucidate the device characteristics and partially explain the reduced charge density observed.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)

Appears in the scientific report 2013

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