000150545 001__ 150545
000150545 005__ 20210129213216.0
000150545 020__ $$a978-3-89336-870-9
000150545 037__ $$aFZJ-2014-00599
000150545 041__ $$aEnglish
000150545 1001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b0$$eCorresponding author$$ufzj
000150545 1112_ $$a15th European Workshop on Metalorganic Vapour Phase Epitaxie$$cAachen$$d2013-06-02 - 2013-06-05$$gEWMOVPE XV$$wGermany
000150545 245__ $$aMicro-PL for MOVPE grown AlGaN/GaN HFET structure optimization
000150545 260__ $$c2013
000150545 300__ $$a59 - 62
000150545 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1390464390_4175
000150545 3367_ $$033$$2EndNote$$aConference Paper
000150545 3367_ $$2ORCID$$aCONFERENCE_PAPER
000150545 3367_ $$2DataCite$$aOutput Types/Conference Paper
000150545 3367_ $$2DRIVER$$aconferenceObject
000150545 3367_ $$2BibTeX$$aINPROCEEDINGS
000150545 500__ $$3POF3_Assignment on 2016-02-29
000150545 520__ $$aMicro-photoluminescence (μ-PL) studies were performed on AlGaN/GaN heterostructure field effect transistor
(HFET) structures with different gate recessing depths. It was found that μ-PL is the method of choice for
detecting strain in the lateral resolution relevant for HFET device length scales and therefore useful for
structure optimization. Strain is partially relaxed and non-uniform after recessing. The PL-results elucidate the
device characteristics and partially explain the reduced charge density observed.
000150545 536__ $$0G:(DE-HGF)POF2-423$$a423 - Sensorics and bioinspired systems (POF2-423)$$cPOF2-423$$fPOF II$$x0
000150545 7001_ $$0P:(DE-Juel1)144014$$aWinden, Andreas$$b1$$ufzj
000150545 7001_ $$0P:(DE-Juel1)125583$$aFox, Alfred$$b2$$ufzj
000150545 7001_ $$0P:(DE-Juel1)141986$$aHaab, Anna$$b3$$ufzj
000150545 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b4$$ufzj
000150545 7001_ $$0P:(DE-HGF)0$$aKordos, Peter$$b5
000150545 7001_ $$0P:(DE-HGF)0$$aGregusova, Dagmar$$b6
000150545 7001_ $$0P:(DE-HGF)0$$aMaros, Michel$$b7
000150545 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b8$$ufzj
000150545 909CO $$ooai:juser.fz-juelich.de:150545$$pVDB
000150545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000150545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144014$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000150545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125583$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000150545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)141986$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000150545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000150545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich GmbH$$b8$$kFZJ
000150545 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000150545 9131_ $$0G:(DE-HGF)POF2-423$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vSensorics and bioinspired systems$$x0
000150545 9141_ $$y2013
000150545 920__ $$lyes
000150545 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000150545 980__ $$acontrib
000150545 980__ $$aVDB
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000150545 980__ $$aI:(DE-Juel1)PGI-9-20110106