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001 | 150545 | ||
005 | 20210129213216.0 | ||
020 | _ | _ | |a 978-3-89336-870-9 |
037 | _ | _ | |a FZJ-2014-00599 |
041 | _ | _ | |a English |
100 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 0 |u fzj |e Corresponding author |
111 | 2 | _ | |a 15th European Workshop on Metalorganic Vapour Phase Epitaxie |w Germany |c Aachen |d 2013-06-02 - 2013-06-05 |g EWMOVPE XV |
245 | _ | _ | |a Micro-PL for MOVPE grown AlGaN/GaN HFET structure optimization |
260 | _ | _ | |c 2013 |
300 | _ | _ | |a 59 - 62 |
336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1390464390_4175 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
336 | 7 | _ | |a conferenceObject |2 DRIVER |
336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
520 | _ | _ | |a Micro-photoluminescence (μ-PL) studies were performed on AlGaN/GaN heterostructure field effect transistor
(HFET) structures with different gate recessing depths. It was found that μ-PL is the method of choice for
detecting strain in the lateral resolution relevant for HFET device length scales and therefore useful for
structure optimization. Strain is partially relaxed and non-uniform after recessing. The PL-results elucidate the
device characteristics and partially explain the reduced charge density observed. |
536 | _ | _ | |a 423 - Sensorics and bioinspired systems (POF2-423) |0 G:(DE-HGF)POF2-423 |c POF2-423 |x 0 |f POF II |
700 | 1 | _ | |a Winden, Andreas |0 P:(DE-Juel1)144014 |b 1 |u fzj |
700 | 1 | _ | |a Fox, Alfred |0 P:(DE-Juel1)125583 |b 2 |u fzj |
700 | 1 | _ | |a Haab, Anna |0 P:(DE-Juel1)141986 |b 3 |u fzj |
700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 4 |u fzj |
700 | 1 | _ | |a Kordos, Peter |0 P:(DE-HGF)0 |b 5 |
700 | 1 | _ | |a Gregusova, Dagmar |0 P:(DE-HGF)0 |b 6 |
700 | 1 | _ | |a Maros, Michel |0 P:(DE-HGF)0 |b 7 |
700 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 8 |u fzj |
909 | C | O | |o oai:juser.fz-juelich.de:150545 |p VDB |
910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)125593 |
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910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)125588 |
910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 8 |6 P:(DE-Juel1)128613 |
913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-423 |2 G:(DE-HGF)POF2-400 |v Sensorics and bioinspired systems |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
914 | 1 | _ | |y 2013 |
920 | _ | _ | |l yes |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
980 | _ | _ | |a contrib |
980 | _ | _ | |a VDB |
980 | _ | _ | |a UNRESTRICTED |
980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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