%0 Conference Paper
%A von der Ahe, Martina
%A Winden, Andreas
%A Sofer, Zdenek
%A Mussler, Gregor
%A Grützmacher, Detlev
%A Marso, Michel
%A Hardtdegen, Hilde
%A Mikulics, Martin
%T MOCVD and characterization of GaAs layers on Al pseudo-substrates for future ultrafast optoelectronics
%M FZJ-2014-00601
%@ 978-3-89336-870-9
%P 95-98
%D 2013
%X GaAs is broadly used in modern electronics. The application of GaAs-based devices in high power electronics,
%X however, is complicated due to the substantial excess heat generated during device operation. One possibility to
%X dissipate the excess heat is to employ substrates with high thermal conductivity. In this contribution we present
%X the growth of GaAs layers by metalorganic vapor phase epitaxy (MOVPE) on aluminum (111) pseudosubstrates
%X designed for an improved heat management in GaAs electronic circuits. They were prepared by Al
%X evaporation on (100) GaAs substrates and subsequent heat treatment. The GaAs layers are polycrystalline. The
%X roughnesses of the layers were in the range of 13 to 62 nm and the thickness in the range of 600 – 2300 nm.
%X The layers exhibit extremely low carrier lifetime due to the growth-induced defects and are suitable for the
%X fabrication of ultrafast metal-semiconductor-metal (MSM) photodetectors (PDs).
%B 15th European Workshop on Metalorganic Vapour Phase Epitaxie
%C 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2 2 Jun 2013 - 5 Jun 2013
M2 Aachen, Germany
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%U https://juser.fz-juelich.de/record/150547