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| Home > Publications database > MOCVD and characterization of GaAs layers on Al pseudo-substrates for future ultrafast optoelectronics |
| Home > Publications database > MOCVD and characterization of GaAs layers on Al pseudo-substrates for future ultrafast optoelectronics |
| Contribution to a conference proceedings | FZJ-2014-00601 |
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2013
ISBN: 978-3-89336-870-9
Abstract: GaAs is broadly used in modern electronics. The application of GaAs-based devices in high power electronics, however, is complicated due to the substantial excess heat generated during device operation. One possibility to dissipate the excess heat is to employ substrates with high thermal conductivity. In this contribution we present the growth of GaAs layers by metalorganic vapor phase epitaxy (MOVPE) on aluminum (111) pseudosubstrates designed for an improved heat management in GaAs electronic circuits. They were prepared by Al evaporation on (100) GaAs substrates and subsequent heat treatment. The GaAs layers are polycrystalline. The roughnesses of the layers were in the range of 13 to 62 nm and the thickness in the range of 600 – 2300 nm. The layers exhibit extremely low carrier lifetime due to the growth-induced defects and are suitable for the fabrication of ultrafast metal-semiconductor-metal (MSM) photodetectors (PDs).
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