TY  - CONF
AU  - von der Ahe, Martina
AU  - Winden, Andreas
AU  - Sofer, Zdenek
AU  - Mussler, Gregor
AU  - Grützmacher, Detlev
AU  - Marso, Michel
AU  - Hardtdegen, Hilde
AU  - Mikulics, Martin
TI  - MOCVD and characterization of GaAs layers on Al pseudo-substrates for future ultrafast optoelectronics
M1  - FZJ-2014-00601
SN  - 978-3-89336-870-9
SP  - 95-98
PY  - 2013
AB  - GaAs is broadly used in modern electronics. The application of GaAs-based devices in high power electronics,
AB  - however, is complicated due to the substantial excess heat generated during device operation. One possibility to
AB  - dissipate the excess heat is to employ substrates with high thermal conductivity. In this contribution we present
AB  - the growth of GaAs layers by metalorganic vapor phase epitaxy (MOVPE) on aluminum (111) pseudosubstrates
AB  - designed for an improved heat management in GaAs electronic circuits. They were prepared by Al
AB  - evaporation on (100) GaAs substrates and subsequent heat treatment. The GaAs layers are polycrystalline. The
AB  - roughnesses of the layers were in the range of 13 to 62 nm and the thickness in the range of 600 – 2300 nm.
AB  - The layers exhibit extremely low carrier lifetime due to the growth-induced defects and are suitable for the
AB  - fabrication of ultrafast metal-semiconductor-metal (MSM) photodetectors (PDs).
T2  - 15th European Workshop on Metalorganic Vapour Phase Epitaxie
CY  - 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2  - 2 Jun 2013 - 5 Jun 2013
M2  - Aachen, Germany
LB  - PUB:(DE-HGF)8
UR  - https://juser.fz-juelich.de/record/150547
ER  -