Hauptseite > Publikationsdatenbank > MOCVD and characterization of GaAs layers on Al pseudo-substrates for future ultrafast optoelectronics > print

001     150547
005     20210129213217.0
020 _ _ |a 978-3-89336-870-9
037 _ _ |a FZJ-2014-00601
100 1 _ |a von der Ahe, Martina
|0 P:(DE-Juel1)128650
|b 0
|e Corresponding author
111 2 _ |a 15th European Workshop on Metalorganic Vapour Phase Epitaxie
|w Germany
|c Aachen
|d 2013-06-02 - 2013-06-05
|g EWMOVPE XV
245 _ _ |a MOCVD and characterization of GaAs layers on Al pseudo-substrates for future ultrafast optoelectronics
260 _ _ |c 2013
300 _ _ |a 95-98
336 7 _ |a Contribution to a conference proceedings
|b contrib
|m contrib
|0 PUB:(DE-HGF)8
|s 1390464619_10361
|2 PUB:(DE-HGF)
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a CONFERENCE_PAPER
|2 ORCID
336 7 _ |a Output Types/Conference Paper
|2 DataCite
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a INPROCEEDINGS
|2 BibTeX
500 _ _ |3 POF3_Assignment on 2016-02-29
520 _ _ |a GaAs is broadly used in modern electronics. The application of GaAs-based devices in high power electronics, however, is complicated due to the substantial excess heat generated during device operation. One possibility to dissipate the excess heat is to employ substrates with high thermal conductivity. In this contribution we present the growth of GaAs layers by metalorganic vapor phase epitaxy (MOVPE) on aluminum (111) pseudosubstrates designed for an improved heat management in GaAs electronic circuits. They were prepared by Al evaporation on (100) GaAs substrates and subsequent heat treatment. The GaAs layers are polycrystalline. The roughnesses of the layers were in the range of 13 to 62 nm and the thickness in the range of 600 – 2300 nm. The layers exhibit extremely low carrier lifetime due to the growth-induced defects and are suitable for the fabrication of ultrafast metal-semiconductor-metal (MSM) photodetectors (PDs).
536 _ _ |a 423 - Sensorics and bioinspired systems (POF2-423)
|0 G:(DE-HGF)POF2-423
|c POF2-423
|x 0
|f POF II
700 1 _ |a Winden, Andreas
|0 P:(DE-Juel1)144014
|b 1
|u fzj
700 1 _ |a Sofer, Zdenek
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Mussler, Gregor
|0 P:(DE-Juel1)128617
|b 3
|u fzj
700 1 _ |a Grützmacher, Detlev
|0 P:(DE-Juel1)125588
|b 4
|u fzj
700 1 _ |a Marso, Michel
|0 P:(DE-HGF)0
|b 5
700 1 _ |a Hardtdegen, Hilde
|0 P:(DE-Juel1)125593
|b 6
|u fzj
700 1 _ |a Mikulics, Martin
|0 P:(DE-Juel1)128613
|b 7
|u fzj
909 C O |o oai:juser.fz-juelich.de:150547
|p VDB
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)128650
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)144014
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)128617
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)125588
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 6
|6 P:(DE-Juel1)125593
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 7
|6 P:(DE-Juel1)128613
913 2 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-529H
|2 G:(DE-HGF)POF3-500
|v Addenda
|x 0
913 1 _ |a DE-HGF
|b Schlüsseltechnologien
|1 G:(DE-HGF)POF2-420
|0 G:(DE-HGF)POF2-423
|2 G:(DE-HGF)POF2-400
|v Sensorics and bioinspired systems
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF2
|l Grundlagen zukünftiger Informationstechnologien
914 1 _ |y 2013
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a contrib
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-9-20110106

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