%0 Conference Paper
%A Haab, Anna
%A Jin, Jiehong
%A Kardynal, Beata
%A Mussler, Gregor
%A Winden, Andreas
%A Stoica, Toma
%A Mikulics, Martin
%A Grützmacher, Detlev
%A Hardtdegen, Hilde
%T Innovative fabrication of columnar InxGa1-xN/GaN nanostructures for photovoltaic applications
%M FZJ-2014-00604
%D 2013
%X Group III-nitride nanostructures for future generation, high efficient energy device applications were fabricated
%X by capping nanostructured GaN templates with InxGa1-xN grown by metal-organic vapour phase epitaxy
%X (MOVPE) in a concentration range of x between 0 and 1. The nanostructure GaN templates exhibit a high
%X crystallinity and excellent optical properties before overgrowth. After overgrowth a large band gap variation in
%X the solar spectrum could be achieved. The indium concentration in the ternary InxGa1-xN alloy was controllable
%X between x = 0 to 1. The investigations demonstrate that the nanostructures are promising for photovoltaic
%X applications.
%B 15th European Workshop on Metalorganic Vapour Phase Epitaxie
%C 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2 2 Jun 2013 - 5 Jun 2013
M2 Aachen, Germany
%F PUB:(DE-HGF)24
%9 Poster
%U https://juser.fz-juelich.de/record/150550