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| Home > Publications database > Innovative fabrication of columnar InxGa1-xN/GaN nanostructures for photovoltaic applications |
| Poster (Other) | FZJ-2014-00604 |
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2013
Abstract: Group III-nitride nanostructures for future generation, high efficient energy device applications were fabricated by capping nanostructured GaN templates with InxGa1-xN grown by metal-organic vapour phase epitaxy (MOVPE) in a concentration range of x between 0 and 1. The nanostructure GaN templates exhibit a high crystallinity and excellent optical properties before overgrowth. After overgrowth a large band gap variation in the solar spectrum could be achieved. The indium concentration in the ternary InxGa1-xN alloy was controllable between x = 0 to 1. The investigations demonstrate that the nanostructures are promising for photovoltaic applications.
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