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@INPROCEEDINGS{Haab:150550,
author = {Haab, Anna and Jin, Jiehong and Kardynal, Beata and
Mussler, Gregor and Winden, Andreas and Stoica, Toma and
Mikulics, Martin and Grützmacher, Detlev and Hardtdegen,
Hilde},
title = {{I}nnovative fabrication of columnar
{I}nx{G}a1-x{N}/{G}a{N} nanostructures for photovoltaic
applications},
reportid = {FZJ-2014-00604},
year = {2013},
abstract = {Group III-nitride nanostructures for future generation,
high efficient energy device applications were fabricated by
capping nanostructured GaN templates with InxGa1-xN grown by
metal-organic vapour phase epitaxy (MOVPE) in a
concentration range of x between 0 and 1. The nanostructure
GaN templates exhibit a high crystallinity and excellent
optical properties before overgrowth. After overgrowth a
large band gap variation in the solar spectrum could be
achieved. The indium concentration in the ternary InxGa1-xN
alloy was controllable between x = 0 to 1. The
investigations demonstrate that the nanostructures are
promising for photovoltaic applications.},
month = {Jun},
date = {2013-06-02},
organization = {15th European Workshop on Metalorganic
Vapour Phase Epitaxie, Aachen
(Germany), 2 Jun 2013 - 5 Jun 2013},
subtyp = {Other},
cin = {PGI-9},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)24},
url = {https://juser.fz-juelich.de/record/150550},
}