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@INPROCEEDINGS{Haab:150550,
      author       = {Haab, Anna and Jin, Jiehong and Kardynal, Beata and
                      Mussler, Gregor and Winden, Andreas and Stoica, Toma and
                      Mikulics, Martin and Grützmacher, Detlev and Hardtdegen,
                      Hilde},
      title        = {{I}nnovative fabrication of columnar
                      {I}nx{G}a1-x{N}/{G}a{N} nanostructures for photovoltaic
                      applications},
      reportid     = {FZJ-2014-00604},
      year         = {2013},
      abstract     = {Group III-nitride nanostructures for future generation,
                      high efficient energy device applications were fabricated by
                      capping nanostructured GaN templates with InxGa1-xN grown by
                      metal-organic vapour phase epitaxy (MOVPE) in a
                      concentration range of x between 0 and 1. The nanostructure
                      GaN templates exhibit a high crystallinity and excellent
                      optical properties before overgrowth. After overgrowth a
                      large band gap variation in the solar spectrum could be
                      achieved. The indium concentration in the ternary InxGa1-xN
                      alloy was controllable between x = 0 to 1. The
                      investigations demonstrate that the nanostructures are
                      promising for photovoltaic applications.},
      month         = {Jun},
      date          = {2013-06-02},
      organization  = {15th European Workshop on Metalorganic
                       Vapour Phase Epitaxie, Aachen
                       (Germany), 2 Jun 2013 - 5 Jun 2013},
      subtyp        = {Other},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/150550},
}