Hauptseite > Publikationsdatenbank > Innovative fabrication of columnar InxGa1-xN/GaN nanostructures for photovoltaic applications > print

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037 _ _ |a FZJ-2014-00604
041 _ _ |a English
100 1 _ |a Haab, Anna
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111 2 _ |a 15th European Workshop on Metalorganic Vapour Phase Epitaxie
|w Germany
|c Aachen
|d 2013-06-02 - 2013-06-05
|g EWMOVPE XV
245 _ _ |a Innovative fabrication of columnar InxGa1-xN/GaN nanostructures for photovoltaic applications
260 _ _ |c 2013
336 7 _ |a Poster
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520 _ _ |a Group III-nitride nanostructures for future generation, high efficient energy device applications were fabricated by capping nanostructured GaN templates with InxGa1-xN grown by metal-organic vapour phase epitaxy (MOVPE) in a concentration range of x between 0 and 1. The nanostructure GaN templates exhibit a high crystallinity and excellent optical properties before overgrowth. After overgrowth a large band gap variation in the solar spectrum could be achieved. The indium concentration in the ternary InxGa1-xN alloy was controllable between x = 0 to 1. The investigations demonstrate that the nanostructures are promising for photovoltaic applications.
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
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700 1 _ |a Jin, Jiehong
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700 1 _ |a Kardynal, Beata
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700 1 _ |a Mussler, Gregor
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700 1 _ |a Winden, Andreas
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700 1 _ |a Stoica, Toma
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700 1 _ |a Mikulics, Martin
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Hardtdegen, Hilde
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