000150551 001__ 150551
000150551 005__ 20210129213218.0
000150551 020__ $$a978-3-89336-870-9
000150551 037__ $$aFZJ-2014-00605
000150551 1001_ $$0P:(DE-Juel1)145686$$aRieß, Sally$$b0$$eCorresponding author
000150551 1112_ $$a15th European Workshop on Metalorganic Vapour Phase Epitaxie$$cAachen$$d2013-06-02 - 2013-06-05$$gEWMOVPE XV$$wGermany
000150551 245__ $$aChemical vapour deposition of chalcogenide phase change materials using digermane
000150551 260__ $$c2013
000150551 300__ $$a277 - 280
000150551 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1390465161_4175
000150551 3367_ $$033$$2EndNote$$aConference Paper
000150551 3367_ $$2ORCID$$aCONFERENCE_PAPER
000150551 3367_ $$2DataCite$$aOutput Types/Conference Paper
000150551 3367_ $$2DRIVER$$aconferenceObject
000150551 3367_ $$2BibTeX$$aINPROCEEDINGS
000150551 500__ $$3POF3_Assignment on 2016-02-29
000150551 520__ $$aThe use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical
vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth
temperature on the film morphology was observed by SEM and AFM imaging. The incorporation of Ge into
the GST crystalline structure was proven using Raman scattering and XPS measurements.
000150551 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000150551 7001_ $$0P:(DE-HGF)0$$aSchlösser, Daniela$$b1
000150551 7001_ $$0P:(DE-Juel1)131035$$aWiemann, Carsten$$b2
000150551 7001_ $$0P:(DE-HGF)0$$aHauer, Benedikt$$b3
000150551 7001_ $$0P:(DE-HGF)0$$aTaubner, Thomas$$b4
000150551 7001_ $$0P:(DE-Juel1)128637$$aStoica, Toma$$b5
000150551 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b6
000150551 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b7
000150551 909CO $$ooai:juser.fz-juelich.de:150551$$pVDB
000150551 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145686$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
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000150551 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131035$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000150551 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128637$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000150551 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000150551 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000150551 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000150551 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000150551 9141_ $$y2013
000150551 920__ $$lyes
000150551 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000150551 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x1
000150551 980__ $$acontrib
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