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| Hauptseite > Publikationsdatenbank > Chemical vapour deposition of chalcogenide phase change materials using digermane > print |
| Hauptseite > Publikationsdatenbank > Chemical vapour deposition of chalcogenide phase change materials using digermane > print |
| 001 | 150551 | ||
| 005 | 20210129213218.0 | ||
| 020 | _ | _ | |a 978-3-89336-870-9 |
| 037 | _ | _ | |a FZJ-2014-00605 |
| 100 | 1 | _ | |a Rieß, Sally |0 P:(DE-Juel1)145686 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 15th European Workshop on Metalorganic Vapour Phase Epitaxie |w Germany |c Aachen |d 2013-06-02 - 2013-06-05 |g EWMOVPE XV |
| 245 | _ | _ | |a Chemical vapour deposition of chalcogenide phase change materials using digermane |
| 260 | _ | _ | |c 2013 |
| 300 | _ | _ | |a 277 - 280 |
| 336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1390465161_4175 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a The use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical
vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth
temperature on the film morphology was observed by SEM and AFM imaging. The incorporation of Ge into
the GST crystalline structure was proven using Raman scattering and XPS measurements. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |x 0 |f POF II |
| 700 | 1 | _ | |a Schlösser, Daniela |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Wiemann, Carsten |0 P:(DE-Juel1)131035 |b 2 |
| 700 | 1 | _ | |a Hauer, Benedikt |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Taubner, Thomas |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Stoica, Toma |0 P:(DE-Juel1)128637 |b 5 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 6 |
| 700 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 7 |
| 909 | C | O | |o oai:juser.fz-juelich.de:150551 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)145686 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)131035 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)128637 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)125588 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)125593 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2013 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-6-20110106 |k PGI-6 |l Elektronische Eigenschaften |x 1 |
| 980 | _ | _ | |a contrib |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
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