Journal Article

FZJ-2014-01458

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Quantum dots in InAs nanowires induced by surface potential fluctuations

Weis, K. (Corresponding author)FZJ* ; Wirths, S.FZJ* ; Winden, A.FZJ* ; Sladek, K. ; Hardtdegen, H.FZJ* ; Lüth, H.FZJ* ; Grützmacher, D.FZJ* ; Schäpers, T.FZJ*

2014
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0957-4484/25/13/135203

Abstract: Back-gated InAs nanowire field-effect transistors are studied focusing on the formation of intrinsic quantum dots, i.e. dots not intentionally defined by electrodes. Such dots have been studied before, but the suggested explanations for their origin leave some open questions, which are addressed here. Stability diagrams of samples with different doping levels are recorded at electron temperatures below 200 mK, allowing us to estimate the number and size of the dots as well as the type of connection, i.e. in series or in parallel. We discuss several potential physical origins of the dots and conclude that they are most probably induced by potential fluctuations at the nanowire surface. Additionally, we show that via gate voltage and doping, the samples can be tuned to different regimes of Coulomb blockade.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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