000015163 001__ 15163
000015163 005__ 20180208214158.0
000015163 0247_ $$2DOI$$a10.1109/TED.2010.2096509
000015163 0247_ $$2WOS$$aWOS:000287665700005
000015163 037__ $$aPreJuSER-15163
000015163 041__ $$aeng
000015163 084__ $$2WoS$$aEngineering, Electrical & Electronic
000015163 084__ $$2WoS$$aPhysics, Applied
000015163 1001_ $$0P:(DE-Juel1)156578$$aDurgun Özben, E.$$b0$$uFZJ
000015163 245__ $$aRare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
000015163 260__ $$c2011
000015163 300__ $$a617 - 622
000015163 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000015163 3367_ $$2DataCite$$aOutput Types/Journal article
000015163 3367_ $$00$$2EndNote$$aJournal Article
000015163 3367_ $$2BibTeX$$aARTICLE
000015163 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000015163 3367_ $$2DRIVER$$aarticle
000015163 440_0 $$02508$$aIEEE Transactions on Electron Devices$$v58$$x0018-9383$$y3
000015163 500__ $$3POF3_Assignment on 2016-02-29
000015163 500__ $$aThis work was supported in part by the Project KZWEI, which is funded in line with the technology funding for European Regional Development Fund, by the Free State of Saxony, by the German Federal Ministry of Education and Research via the MEDEA+ Project DECISIF under Grant 2T104, and by the Nanosil Network from the European Community (Seventh Framework Program) under Grant 216171. The review of this paper was arranged by Editor V. R. Rao.
000015163 520__ $$aTerbium scandate (TbScO3) and lanthanum scandate (LaScO3) have been investigated as gate dielectrics for metal-oxide-semiconductor field-effect transistors on both silicon-on-insulator (SOI) and strained SOI (sSOI) substrates. X-ray photoelectron spectroscopy analysis revealed the presence of a silicate at the interface for TbScO3 on Si, whereas a silicate/SiO2-like interface was found for the LaScO3 on Si. A full replacement gate process was developed to fabricate high-kappa/metal gate fully depleted transistors on SOI and sSOI. LaScO3 transistors with a gate length of 2 mu m show excellent characteristics with steep subthreshold slopes of 72 mV/dec, high Ion/Ioff ratios, and electron mobility of 180 cm(2)/V . s for SOI and 375 cm(2)/V . s for sSOI at low field, which is superior to corresponding TbScO3 devices. All sSOI transistors showed 2 times higher electron mobility than SOI reference devices.
000015163 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000015163 536__ $$0G:(EU-Grant)216171$$2European Community$$aNANOSIL - Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (216171)$$c216171$$fFP7-ICT-2007-1$$x1
000015163 588__ $$aDataset connected to Web of Science
000015163 65320 $$2Author$$aHigh-kappa
000015163 65320 $$2Author$$aLaScO3
000015163 65320 $$2Author$$amobility
000015163 65320 $$2Author$$ametal-oxide-semiconductor field-effect transistors (MOSFETs)
000015163 65320 $$2Author$$areplacement gate
000015163 65320 $$2Author$$asilicon on insulator (SOI)
000015163 65320 $$2Author$$astrained Si
000015163 65320 $$2Author$$aTbScO3
000015163 650_7 $$2WoSType$$aJ
000015163 7001_ $$0P:(DE-Juel1)VDB96623$$aLopes, J.M.J.$$b1$$uFZJ
000015163 7001_ $$0P:(DE-Juel1)VDB88502$$aNichau, A.$$b2$$uFZJ
000015163 7001_ $$0P:(DE-Juel1)VDB96622$$aLupták, R.$$b3$$uFZJ
000015163 7001_ $$0P:(DE-Juel1)128602$$aLenk, S.$$b4$$uFZJ
000015163 7001_ $$0P:(DE-Juel1)VDB17427$$aBesmehn, A.$$b5$$uFZJ
000015163 7001_ $$0P:(DE-HGF)0$$aBourdelle, K.K.$$b6
000015163 7001_ $$0P:(DE-Juel1)VDB97138$$aZhao, Q.T.$$b7$$uFZJ
000015163 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b8$$uFZJ
000015163 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b9$$uFZJ
000015163 773__ $$0PERI:(DE-600)2028088-9$$a10.1109/TED.2010.2096509$$gVol. 58, p. 617 - 622$$p617 - 622$$q58<617 - 622$$tIEEE Transactions on Electron Devices$$v58$$x0018-9383$$y2011
000015163 8567_ $$uhttp://dx.doi.org/10.1109/TED.2010.2096509
000015163 909CO $$ooai:juser.fz-juelich.de:15163$$pec_fundedresources$$pVDB$$popenaire
000015163 9141_ $$y2011
000015163 9131_ $$0G:(DE-Juel1)FUEK412$$aDE-HGF$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000015163 9131_ $$0G:(EU-Grant)216171$$aDE-HGF$$vSilicon-based nanostructures and nanodevices for long term nanoelectronics applications
000015163 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000015163 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000015163 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$gPGI$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000015163 9201_ $$0I:(DE-Juel1)ZCH-20090406$$gZCH$$kZCH$$lZentralabteilung für Chemische Analysen$$x2
000015163 970__ $$aVDB:(DE-Juel1)127866
000015163 980__ $$aVDB
000015163 980__ $$aConvertedRecord
000015163 980__ $$ajournal
000015163 980__ $$aI:(DE-82)080009_20140620
000015163 980__ $$aI:(DE-Juel1)PGI-9-20110106
000015163 980__ $$aI:(DE-Juel1)ZEA-3-20090406
000015163 980__ $$aUNRESTRICTED
000015163 981__ $$aI:(DE-Juel1)PGI-9-20110106
000015163 981__ $$aI:(DE-Juel1)ZEA-3-20090406
000015163 981__ $$aI:(DE-Juel1)VDB881