guest ::
| Home > Publications database > Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process |
| Home > Publications database > Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process |
| Journal Article | PreJuSER-15163 |
; ; ; ; ; ; ; ; ;
2011
This record in other databases: 
Please use a persistent id in citations: doi:10.1109/TED.2010.2096509
Abstract: Terbium scandate (TbScO3) and lanthanum scandate (LaScO3) have been investigated as gate dielectrics for metal-oxide-semiconductor field-effect transistors on both silicon-on-insulator (SOI) and strained SOI (sSOI) substrates. X-ray photoelectron spectroscopy analysis revealed the presence of a silicate at the interface for TbScO3 on Si, whereas a silicate/SiO2-like interface was found for the LaScO3 on Si. A full replacement gate process was developed to fabricate high-kappa/metal gate fully depleted transistors on SOI and sSOI. LaScO3 transistors with a gate length of 2 mu m show excellent characteristics with steep subthreshold slopes of 72 mV/dec, high Ion/Ioff ratios, and electron mobility of 180 cm(2)/V . s for SOI and 375 cm(2)/V . s for sSOI at low field, which is superior to corresponding TbScO3 devices. All sSOI transistors showed 2 times higher electron mobility than SOI reference devices.
Keyword(s): J ; High-kappa (auto) ; LaScO3 (auto) ; mobility (auto) ; metal-oxide-semiconductor field-effect transistors (MOSFETs) (auto) ; replacement gate (auto) ; silicon on insulator (SOI) (auto) ; strained Si (auto) ; TbScO3 (auto)
|
The record appears in these collections: |