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@ARTICLE{Durgunzben:15163,
      author       = {Durgun Özben, E. and Lopes, J.M.J. and Nichau, A. and
                      Lupták, R. and Lenk, S. and Besmehn, A. and Bourdelle, K.K.
                      and Zhao, Q.T. and Schubert, J. and Mantl, S.},
      title        = {{R}are-{E}arth {S}candate/{T}i{N} {G}ate {S}tacks in {SOI}
                      {MOSFET}s {F}abricated with a {F}ull {R}eplacement {G}ate
                      {P}rocess},
      journal      = {IEEE Transactions on Electron Devices},
      volume       = {58},
      issn         = {0018-9383},
      reportid     = {PreJuSER-15163},
      pages        = {617 - 622},
      year         = {2011},
      note         = {This work was supported in part by the Project KZWEI, which
                      is funded in line with the technology funding for European
                      Regional Development Fund, by the Free State of Saxony, by
                      the German Federal Ministry of Education and Research via
                      the MEDEA+ Project DECISIF under Grant 2T104, and by the
                      Nanosil Network from the European Community (Seventh
                      Framework Program) under Grant 216171. The review of this
                      paper was arranged by Editor V. R. Rao.},
      abstract     = {Terbium scandate (TbScO3) and lanthanum scandate (LaScO3)
                      have been investigated as gate dielectrics for
                      metal-oxide-semiconductor field-effect transistors on both
                      silicon-on-insulator (SOI) and strained SOI (sSOI)
                      substrates. X-ray photoelectron spectroscopy analysis
                      revealed the presence of a silicate at the interface for
                      TbScO3 on Si, whereas a silicate/SiO2-like interface was
                      found for the LaScO3 on Si. A full replacement gate process
                      was developed to fabricate high-kappa/metal gate fully
                      depleted transistors on SOI and sSOI. LaScO3 transistors
                      with a gate length of 2 mu m show excellent characteristics
                      with steep subthreshold slopes of 72 mV/dec, high Ion/Ioff
                      ratios, and electron mobility of 180 cm(2)/V . s for SOI and
                      375 cm(2)/V . s for sSOI at low field, which is superior to
                      corresponding TbScO3 devices. All sSOI transistors showed 2
                      times higher electron mobility than SOI reference devices.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9 / ZCH},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106 /
                      I:(DE-Juel1)ZCH-20090406},
      pnm          = {Grundlagen für zukünftige Informationstechnologien /
                      NANOSIL - Silicon-based nanostructures and nanodevices for
                      long term nanoelectronics applications (216171)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(EU-Grant)216171},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000287665700005},
      doi          = {10.1109/TED.2010.2096509},
      url          = {https://juser.fz-juelich.de/record/15163},
}