Journal Article

FZJ-2014-01813

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Crystal Phase Selective Growth in GaAs/InAs Core–Shell Nanowires

Rieger, T. (Corresponding author)FZJ* ; Schäpers, T.FZJ* ; Grützmacher, D.FZJ* ; Lepsa, M. I.FZJ*

2014
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/cg401667v

Abstract: We present a novel type of core–shell nanowires in which only certain parts of the core are covered by the shell. This is achieved by the crystal phase selective growth of the InAs shell on zinc blende GaAs nanowires with controlled wurtzite inclusions. The shell grows on the zinc blende phase, but its growth is hindered on the wurtzite crystal phase. Nucleation of InAs occurs exclusively on the zinc blende GaAs regions. The wurtzite segments are placed inside self-catalyzed GaAs nanowires by partially consuming and refilling the Ga droplet. The crystal phase selective growth of InAs on the side facets of the GaAs nanowires is explained by the local environment of each new In atom. Because of unbalanced neighbors on the wurtzite side facets, the growth of a highly lattice mismatched material is hindered. This happens not only on the wurtzite segments, but also on regions being characterized by a high density of twins.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection ; Zoological Record

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