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000151988 0247_ $$2doi$$a10.1021/cg401667v
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000151988 041__ $$aEnglish
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000151988 1001_ $$0P:(DE-Juel1)141766$$aRieger, Torsten$$b0$$eCorresponding author$$ufzj
000151988 245__ $$aCrystal Phase Selective Growth in GaAs/InAs Core–Shell Nanowires
000151988 260__ $$aWashington, DC$$bACS Publ.$$c2014
000151988 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1396851983_8524
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000151988 520__ $$aWe present a novel type of core–shell nanowires in which only certain parts of the core are covered by the shell. This is achieved by the crystal phase selective growth of the InAs shell on zinc blende GaAs nanowires with controlled wurtzite inclusions. The shell grows on the zinc blende phase, but its growth is hindered on the wurtzite crystal phase. Nucleation of InAs occurs exclusively on the zinc blende GaAs regions. The wurtzite segments are placed inside self-catalyzed GaAs nanowires by partially consuming and refilling the Ga droplet. The crystal phase selective growth of InAs on the side facets of the GaAs nanowires is explained by the local environment of each new In atom. Because of unbalanced neighbors on the wurtzite side facets, the growth of a highly lattice mismatched material is hindered. This happens not only on the wurtzite segments, but also on regions being characterized by a high density of twins.
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000151988 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b1$$ufzj
000151988 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b2$$ufzj
000151988 7001_ $$0P:(DE-Juel1)128603$$aLepsa, Mihail Ion$$b3$$ufzj
000151988 773__ $$0PERI:(DE-600)2048329-6$$a10.1021/cg401667v$$gVol. 14, no. 3, p. 1167 - 1174$$n3$$p1167 - 1174$$tCrystal growth & design$$v14$$x1528-7505$$y2014
000151988 8564_ $$uhttp://pubs.acs.org/doi/pdf/10.1021/cg401667v
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