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| Hauptseite > Publikationsdatenbank > Crystal Phase Selective Growth in GaAs/InAs Core–Shell Nanowires > print |
| Hauptseite > Publikationsdatenbank > Crystal Phase Selective Growth in GaAs/InAs Core–Shell Nanowires > print |
| 001 | 151988 | ||
| 005 | 20210129213631.0 | ||
| 024 | 7 | _ | |a 10.1021/cg401667v |2 doi |
| 024 | 7 | _ | |a 1528-7505 |2 ISSN |
| 024 | 7 | _ | |a 1528-7483 |2 ISSN |
| 024 | 7 | _ | |a WOS:000332684400032 |2 WOS |
| 037 | _ | _ | |a FZJ-2014-01813 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Rieger, Torsten |0 P:(DE-Juel1)141766 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Crystal Phase Selective Growth in GaAs/InAs Core–Shell Nanowires |
| 260 | _ | _ | |a Washington, DC |c 2014 |b ACS Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1396851983_8524 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a We present a novel type of core–shell nanowires in which only certain parts of the core are covered by the shell. This is achieved by the crystal phase selective growth of the InAs shell on zinc blende GaAs nanowires with controlled wurtzite inclusions. The shell grows on the zinc blende phase, but its growth is hindered on the wurtzite crystal phase. Nucleation of InAs occurs exclusively on the zinc blende GaAs regions. The wurtzite segments are placed inside self-catalyzed GaAs nanowires by partially consuming and refilling the Ga droplet. The crystal phase selective growth of InAs on the side facets of the GaAs nanowires is explained by the local environment of each new In atom. Because of unbalanced neighbors on the wurtzite side facets, the growth of a highly lattice mismatched material is hindered. This happens not only on the wurtzite segments, but also on regions being characterized by a high density of twins. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |f POF II |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 1 |u fzj |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 2 |u fzj |
| 700 | 1 | _ | |a Lepsa, Mihail Ion |0 P:(DE-Juel1)128603 |b 3 |u fzj |
| 773 | _ | _ | |a 10.1021/cg401667v |g Vol. 14, no. 3, p. 1167 - 1174 |0 PERI:(DE-600)2048329-6 |n 3 |p 1167 - 1174 |t Crystal growth & design |v 14 |y 2014 |x 1528-7505 |
| 856 | 4 | _ | |u http://pubs.acs.org/doi/pdf/10.1021/cg401667v |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/151988/files/FZJ-2014-01813.pdf |z Published final document. |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:151988 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)141766 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)128634 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)125588 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)128603 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2014 |
| 915 | _ | _ | |a Peer review unknown |0 StatID:(DE-HGF)0040 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
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| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1040 |2 StatID |b Zoological Record |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 980 | _ | _ | |a journal |
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| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
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