%0 Journal Article
%A Macková, A.
%A Malinský, P.
%A Sofer, Z.
%A Šimek, P.
%A Sedmidubský, D.
%A Mikulics, M.
%A Wilhelm, R. A.
%T A study of the structural and magnetic properties of ZnO implanted by Gd ions
%J Nuclear instruments & methods in physics research / B
%V 307
%@ 0168-583X
%C Amsterdam [u.a.]
%I Elsevier
%M FZJ-2014-02863
%P 1-5
%D 2014
%X GaN layers with 〈0 0 0 1〉 crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 × 1015–1 × 1016 cm−2. The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 × 1015 cm−2 while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 × 1015 cm−2 to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000339131200018
%R 10.1016/j.nimb.2014.02.034
%U https://juser.fz-juelich.de/record/153215